ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,136, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Interconnect through gate cut for stacked FE... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,137, issued on July 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Wire structure for low resistance interconne... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,138, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with assisting layer and me... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,139, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan). "Interconnection structure and method for manufacturin... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,140, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Contact arrangements for deep trenc... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,141, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor structure and fabrication met... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,142, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method for preparing semiconductor device with a... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,143, issued on July 14, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore). "Semiconductor devices including an air gap adjace... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,144, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan). "Semiconductor device with filling layer" was invented... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,145, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with filling layer and meth... Read More